Structural, optical, and electronic studies of Ni doped ZnO thin films

The structural, optical, and electronic properties of Ni-doped ZnO (NZO) thin films were studied by X-ray diffraction (XRD), ultraviolet-visible transmittance spectroscopy (UV-Vis), atomic force microscopy (AFM), Fourier transform infrared (FTIR). 0, 3, 5, 7% NZO deposited on quartz substrate pulsed laser deposition (PLD) technique at a temperature 300 o C oxygen partial pressure 1 mTorr. XRD results show that all crystalline oriented along the (002) plane with wurtzite symmetry. All also high in UV-Visible regime (300-800 nm). Tauc formulation was used to calculate bandgap. thins lesser bandgap as compared pure further Ni concentration reduced from 3.20 eV (3%) 3.11 (7%). AFM revealed uniform over FTIR analysis shows shifting Zn-O-Zn band towards higher frequency numbers concentrations. Results obtained this study indicate PLD grew can be promising candidate for optoelectronic application. Keywords: ZnO, PLD, XRD, Ni, UV, NZO.